2‐nm‐Thick Indium Oxide Featuring High Mobility

Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push wider exploration semiconducting materials cost-effective synthesis processes. In this report, simple approach is proposed to achieve 2-nm-thick indium oxide nanosheets from liquid metal surfaces by employing squeeze printing technique thermal annealing at 250 °C air. The exhibit high degree transparency (>99 %) an excellent electron mobility ≈96 cm2 V−1 s−1, surpassing that pristine printed 2D In2O3 many other reported semiconductors. UV-detectors based on annealed also benefit process step, with photoresponsivity reaching 5.2 × 104 9.4 103 A W−1 wavelengths 285 365 nm, respectively. These values order magnitude higher than as-synthesized In2O3. Utilizing transmission microscopy situ annealing, it demonstrated improvement device performances due nanostructural changes within layers during process. This work highlights facile ambient air compatible method fabricating high-quality oxides, which will find application emerging transparent electronics optoelectronics.